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Al‐doped ZnO (AZO) films are deposited at 200°C by atomic layer deposition (ALD) on borosilicate glass and Si(001) substrates using diethylzinc (DEZ) and aluminum isopropoxide (AIP) as the Zn and Al precursors, respectively. The effect of the Zn/Al ALD cycle ratio and the AIP source temperature on the Al dopant concentration and resistivity of AZO films is carefully investigated. By changing the AIP...
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