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We fabricated a new porous silicon photonic device which is a special multi-layer porous silicon including two different single layer porous silicon and a porous silicon Bragg mirror, and investigated the influence of porous silicon Bragg mirror's structure on the fluorescence intensity of quantum dots (QDs) which infiltrated into porous silicon device, and CdSe/ZnS QDs we used emit at 605nm and 625nm...
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