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Molecular beam epitaxy was used to fabricate Ag(In,Ga)Se2 (AIGS) thin films. To improve the diffusion of Ag, high‐temperature deposition and high‐temperature annealing methods were applied to fabricate AIGS films. The as‐grown AIGS thin films were then used to make AIGS solar cells. We found that grain size and crystallinity of AIGS films were considerably improved by increasing the deposition and...
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