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The defectivity control of replacement metal gate (RMG) chemical mechanical polishing was important for high-k metal gate (HKMG) process. Micro-scratches of RMG CMP easily caused shorting or open of devices. In this study, the micro-scratch reduction of aluminum chemical mechanical polishing (AlCMP) has been investigated to provide solutions for preventing the formation of micro-scratches. Micro-scratches...
A high performance 22/20nm CMOS bulk FinFET achieves the best in-class N/P Ion values of 1200/1100 μA/μm for Ioff=100nA/μm at 1V. Excellent device electrostatic control is demonstrated for gate length (Lgate) down to 20nm. Dual-Epitaxy and multiple stressors are essential to boost the device performance. Dual workfunction (WF) with an advanced High-K/Metal gate (HK/MG) stack is deployed in an integration-friendly...
In this paper process simulation of a novel structural Silicon On Insulator(SOI) LDMOS cell with Trench Gate and Field Plate and Trench Drain (TGFPTD) was done in a sequence of advanced SOI CMOS processes with Silvaco TCAD. The simulated results indicate that the proposed TGFPTD SOI LDMOS cell is feasible to be fabricated in advanced SOI CMOS technologies and the vertical channel length of the vertical...
A self-calibrated pipelined A/D (analog-to-digital) converter technique potentially applicable in high-resolution video applications is described. This approach potentially requires much less area than multistep flash approaches and requires fewer clock cycles than error averaging techniques. Since self-calibration can be performed during interframe intervals, this approach is particularly attractive...
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