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The structure, composition, and temperature coefficient of resistance of tantalum films sputtered in Ar–O 2 mixture were studied as a function of deposition parameters and substrates temperature. As the sputtering power increased from 25 to 100W, the samples deposited at 300°C only consisted of the β phase, the preferred-growth orientation of films changed from (200) to (202) and the temperature...
Effects of deposition parameters on tantalum films deposited by direct current magnetron sputtering were studied. The results indicated that the electrical properties were relative to the oxygen and other impurities rather than to growth orientation. As the sputtering power increases from 25 to 100W, the preferred-growth orientation of Ta films changes from (200) to (202) and the oxygen and impurities...
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