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In this letter, a triple-ion redox reaction has been proposed and investigated in GeSO-based resistance random access memory. Continuous multiresistance states can be obtained by applying a series of increasing cutoff voltages in both set and reset processes. Using data retention tests, these multistates in the set and reset processes were confirmed to be stable. The conduction mechanism gradually...
The resistance switching behavior has been reported in various materials, including perovskite oxides, transition metal oxides, organics, etc. Among these materials, it is interesting to investigate the RRAMs device based on high-k materials, which are appropriate to integration with CMOS process in the future. Samarium oxide (Sm2O3) is one of important rare earth oxide materials. It has been investigated...
In this study, the resistive switching characteristics of the resistive random access memory device based on sputter-deposited IGZO thin film were investigated. The bipolar switching behavior of Ti/IGZO/TiN and ITO/IGZO/TiN devices is regarded as the performance of the formation/disruption of conducting filaments in IGZO thin film. Furthermore, the influence of electrode material is investigated through...
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