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Parasitic inductances are responsible for oscillations and overshoots in the switching waveforms of SiC MOSFETs under high-frequency operations. In addition to the parasitic inductance of PCB board, bus-bar, device packaging, and drive circuit, the load inductance used for energy storage represents another source of parasitic inductance in SiC MOSFETs converters. Therefore, it is necessary to study...
This paper presents the design and experiments of a SiC power MOSFET-based bidirectional switching power pole (BSPP) by benefiting from the advantages of SiC power MOSFETs: high-speed switching, high power density, and low power losses. The goal of the work is to design a printed circuit board (PCB) power traces of the BSPP with the minimum parasitic inductance and balanced switching transient performance...
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