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The 5-nm-thick HfO2 film doped with 35 mol% Gd2O3 (GDH) as a high k dielectric has been epitaxially grown on Si (100) substrate by pulsed laser deposition (PLD). In situ reflection high-energy electron diffraction (RHEED) evolution of the (100)-oriented GDH during the deposition has been investigated and shows that a two-dimensional (2D) single crystalline GDH grows with a smooth surface. The in-plane...
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