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We report a hetero-epitaxial growth of cubic single crystalline HfO 2 film on Si substrates as high k materials by pulse laser ablation (PLA) at 820°C. To eliminate the interfacial defects, the HfO 2 film has then been annealed at 900°C for 5min in N 2 . Reflection high-energy electron diffraction (RHEED) results indicate orientation of the HfO 2 film on Si substrates...
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