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Effects of NH 3 rapid thermal annealing (RTA) on the interface and electrical properties of Gd-doped HfO 2 (GDH)/Si stack were investigated. The process of NH 3 annealing could significantly affect the crystallization, stoichiometric properties of GDH film and the interface characteristic of GDH/Si system. NH 3 annealing also led to the decrease of interface layer thickness...
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