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Rubrene is one of the most promising organic semiconductor for OFET application. The high hole mobility such 1.21 cm2/(Vs) has been reported for the OFET with rubrene thin film evaporated on SiO2 gate insulator for bottom-g; geometry [1]. However, the crystallization of rubrene thin film on SiO2 is difficult to be controlled. A self-assembled monolayer (SAM) scheme is often used to realize the good...
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