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We have realized the first 10-Gbps direct modulation of a 1.3-mum-range laser diode with an InGaAs metamorphic buffer on a GaAs substrate. A 200-mum-long device had threshold currents as low as 5.2 and 11.4 mA at 25 and 85degC, respectively. The maximum operating temperature was 135degC. This excellent performance is attributed to the high quality InGaAs metamorphic buffer.
We have realized 10-Gb/s direct modulation up to 100degC using a metamorphic InGaAs multiple-qunatum well (MQW) laser on a GaAs substrate. The highly strained InGaAs quantum well (QW) and strain-compensated GaAs barrier layer allowed 1.3-mum-range lasing and an increased number of QWs (six). This laser with a 200-mum-long short cavity and a narrow ridge had maximum relaxation oscillation frequencies...
We have successfully developed a 1.26 mum ridge waveguide laser diode with an InGaAs metamorphic buffer on an GaAs substrate grown by metal-organic vapor-phase epitaxy. This laser has achieved the highest operating temperature (188degC) reported for a metamorphic laser.
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