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The nonuniform distribution of N in GaInNAs alloys was investigated by near-field photoluminescence imaging spectroscopy of localized states driven by giant band-gap reduction due to N incorporation. We observed both strongly localized excitons confined in N clusters and rather delocalized excitons, which indicate the onset of alloy formation.
Near-field photoluminescence spectroscopy of a GalnNAs quantum well with a spatial resolution of 50-150 nm (lambda/20- lambda/8) was performed to visualize the bandgap fluctuation, which reflects the nonuniform distribution of N and In atoms. We quantitatively estimate the real-space potential profile and fluctuation of N concentration in combination with numerically solving Schrodinger equation.
A novel structure for an all-optical switch is proposed. A semiconductor multiple quantum well (MQW) waveguide with a deep grating is fabricated, and subnanosecond switching is observed in the structure using a YAG control light. Switching power is as low as 10/sup 4/ W/cm/sup 2/.<<ETX>>
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