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This study proposes a low operation voltage indium-gallium-zinc oxide (IGZO) thin-film transistor using a high-к lanthanum-lutetium oxide as the gate dielectric. It is the first time to integrate the high-к LaLuO3 into an IGZO TFT. The resulting LaLuO3/IGZO TFT shows a low threshold voltage of 0.32 V, a small sub-threshold swing of 310 mV/decade and an acceptable mobility (μFE) of 6.6 cm2/V-s. The...
The HfTiO/Y2O3 stacked dielectric is proposed as the dielectric of metal-insulator-metal (MIM) capacitor. Y2O3 is more thermodynamically stable than HfTiO as contacting with TaN electrode. Interfacial layer thickness and leakage current density can be reduced by inserting a thin Y2O3 layer between HfTiO and TaN. The negative quadruple voltage coefficient of capacitance (VCC-α) of Y2O3 cancels out...
Hafnium titanate (HfTiO) film was adapted as the insulator of MIM capacitors for RF/Analog ICs applications. Low leakage current of 3.4times10-8 A/cm2 at -1 V and high capacitance density of 17.5 fF/mum2 were obtained. A N2-plasma treatment on HfTiO films can further reduce leakage current by two orders of magnitude and no apparent degradation is observed on the capacitance density and voltage coefficient...
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