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A report is presented on the specific design of a GaN HEMT cascode cell demonstrating significant improvement for flip-chip distributed power amplifiers. The active device is a 8 times 50 mum AlGaN/GaN HEMT grown on SiC substrate. The GaN-based wafer integrating the active part is flip-chipped onto an A1N substrate via electrical and mechanical bumps. The cascode cell integrates matching elements...
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