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We report on AlInN/GaN HEMTs fabricated using 0.7µm gate length on SiC substrate by Low Pressure Metal Organic Vapor Phase Epitaxy. Static and pulsed DC characteristics show a maximum dc transconductance of 275mS/mm and drain current of 0.9A/mm. Small signal characterizations show Ft and Fmag of 15 and 40 GHz respectively. Load-pull power measurements were performed at S-Band. At 3.5 GHz, an output...
This paper presents the development of power MMICs in GaN HEMT technology for X-Band T/R modules. We will focus here specifically on the transmit path, which contains the high power amplifier and its power driver. A step by step description of the tasks in order to design this channel will be done, beginning from a short overview of the epitaxial process to the presentation of its measured and simulated...
GaN Based HEMT's have shown superior power-frequency performances than lower band-gap materials. In this paper, we present the design of broadband hybrid 6-18 GHz amplifiers based on AlGaN/GaN HEMT technology with a flip chip approach. Measurements of a single ended amplifier based on a 0.6mm gate width device allow us to achieve more than 1.8W in the [6.5-16] GHz bandwidth corresponding to a power...
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