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Germanium with its high carrier mobility is currently being investigated as an alternative material to silicon for advanced MOS devices. We have reviewed the literature on n‐type and p‐type doping of germanium and established a baseline calibration for technology process simulation. Fundamental parameters for germanium point defects have been selected and extended defect evolution has been calibrated...
Arsenic diffusivity in heavily doped n‐type silicon has been observed to increase strongly with donor concentration. This behaviour has been related to percolation effect, but other explanations, such as mobile As2V clusters (or, more generally, mobile AsDV clusters, with D being a donor), have also been postulated. In this work, we report the modelling and simulation of arsenic diffusion for high...
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