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It has been found that the transverse magnetic field drastically reduces the current gain of an AlGaAs/GaAs hot-electron transistor (HET) at 4.2 K. The result can be understood in terms of the cyclotron motion of hot electrons within the base layer (1000 ? thick). Estimated subpicosecond base transit time confirms the quasiballistic transport of hot electrons across the base layer of the HET.
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