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By using sidewall electrode technology, both record small functional TiO2 selection device (1 × 5 nm2) and HfO2 based RRAM device (1 × 3 nm2) were for the first time successfully demonstrated in this work, improving the understanding of the switching mechanism in an ultra-small, functional resistive random access memory (RRAM) device. The tunneling based low temperature back-end selection devices...
A sidewall electrode technology was successfully developed for the first time in this study, improving the understanding of the working mechanism in an ultra small, functional HfO2-based resistive random access memory (RRAM) device (< 1 × 3 nm2). This technology exhibits potential for application in atomic-scale memories. The 1 × 3 nm2 RRAM device exhibited an excellent performance, featuring a...
In summary, this paper demonstrates fixed-beam switches using well-aligned composite SWNT membranes can be switched at low voltage and high frequency. The measured DC pull-in voltages ranged from 0.9V to 4.8 V depending on the length of the switch. AC measurements indicate a switching delay as low as 600 psec for 300 nm beams. This new SWNT composite membrane switch is promising for a variety of applications...
This paper demonstrates fixed-beam switches using well-aligned composite SWNT membranes, which were prepared by dielectrophoretic process with Layer-by-Layer self-assembly. The measured DC pull-in voltages ranged from 0.9 V to 4.8 V, depending on the length of switches. AC measurements indicate a switching delay as low as 600 psec for 300 nm beams. This new SWNT composite membrane switch is promising...
The reconfiguration of multipipeline arrays in the presence of both faulty processing elements (PEs) and switching elements (SEs) is addressed. Different fault models are used for the PEs and SEs: a PE can be either fault free or faulty; a SE is modeled using a novel functional approach which relates its switching capabilities to its status. This permits a PE to retain a partial functionality in the...
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