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Spintronics is regarded as a promising solution for resolving the major challenging issues related to the scaling of Si-based complementary metal–oxide–semiconductor (CMOS) technology as it offers the advantages of combing the spin and charge degrees of freedom. After decades of progress, the quintessence to achieve practical low-dissipation applications lies in the ability to manipulate magnetic...
Using collective spins or nanomagnets offers the possibility of constructing high speed nonvolatile electronics, resulting in the energy dissipation at the device level possibly approaching the fundamental equilibrium Maxwell-Shannon-Landaur limit. This paper will describe the progress in energy-efficient MgO-based magnetic tunnel junction (MTJ) bits for high-speed spin-transfer-torque magnetoresistive...
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