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To collect and explicate meaningful knowledge of a community, we propose an Activity Model based on structured knowledge. The following issues arise related to the model development: (a) difficulties in capturing activities; (b) difficulty of acquiring knowledge; and (c) difficulty in optimizing the activities to newly adopted technologies. Therefore, we are developing technologies that use on-site...
Electrical field distributions at the interfaces of p-type and n-type BaSi2 homo junction and n-type BaSi2 and p-type Si heterojunction were evaluated by electron beam induced current (EBIC) technique. It was confirmed from transmission-electron microscopy that p-BaSi2 and n-BaSi2 layer were clearly separated. For the n-BaSi2/p-Si hetero junction, we observed strong electric field at the interface...
Current status and future prospects towards BaSi2 pn junction solar cells are presented. As a preliminary step toward forming a BaSi2 pn junction diode, a Cr/n-BaSi2 Schottky junction and an n-BaSi2/p-Si hetero-junction have been fabricated to investigate the electrical properties of the n-BaSi2. Clear rectifying properties have been observed in the J-V characteristics of both the Schottky junction...
Grain boundaries (GBs) and crystalline quality of semiconducting BaSi2 films grown on polycrystalline Si (pc-Si) substrates by molecular beam epitaxy were analyzed using Kelvin probe force microscopy and electron back scattered diffraction. It was found that the degree of a-axis-orientation of BaSi2 was dependent on local crystal orientations of the pc-Si, and thus the surface electrostatic potential...
The authors studied local optical properties of GaAs/AlGaAs heterostructure by scanning tunneling microscope–cathodoluminescence (STM-CL) spectroscopy, where low-energy (∼100 <roman>eV</roman>) electrons field emitted from STM tips were used as bright excitation sources. The STM-CL measurements were performed at the (110) cross-sectional surface of the GaAs/AlGaAs multilayer structure...
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