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Influence of the carrier gas on HfCl 4 –H 2 O and ZrCl 4 –H 2 O atomic layer processes was investigated. The growth rates of HfO 2 and ZrO 2 decreased with increasing flow rate and pressure of the N 2 carrier gas. Data of real-time quartz crystal microbalance measurements demonstrated that the effect observed was mainly due to influence of carrier...
The dependence of optical characteristics on the structure of atomic-layer-deposited titania (TiO 2 ) thin films is studied. Amorphous films grown at 100°C have an optical band gap of 3.3 eV while the refractive index values of these films range from 2.2 to 2.3 at a wavelength of 633 nm. The refractive index can be increased up to 2.65 by using the growth temperatures about 300°C. Composition...
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