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The design, fabrication and test of a 2-18 GHz monolithic Low Noise Amplifier utilizing 0.25 μm AlGaN/GaN HEMT technology is reported. The measured noise figure of the amplifier is less than 4.7dB over the 2 - 18 GHz frequency range, exhibiting a minimum of 3.3 dB at 3 GHz. The LNA gain is 23dB. Even being a low-noise amplifier, the MMIC can withstand 10W input CW RF power, demonstrating no apparent...
The design, fabrication and test of a 2-18 GHz monolithic Low Noise Amplifier utilizing 0.25 μm AlGaN/GaN HEMT technology is reported. The measured noise figure of the amplifier is less than 4.7 dB over the 2 - 18 GHz frequency range, exhibiting a minimum of 3.3 dB at 3 GHz. The LNA gain is 23 dB. Even being a low-noise amplifier, the MMIC can withstand 10W input CW RF power, demonstrating no apparent...
In this paper a first iteration X-band T/R module based on a GaN-HEMT MMIC Front-End chip-set, comprising a power amplifier, robust low-noise amplifier and power switch will be presented. Even though ultimate T/R module performance cannot be achieved with current GaN-HEMT technological maturity the impact that this technology can have at systems level in terms of performance/cost trade-off will be...
In this paper design, fabrication and test of three X-Band robust LNA MMICs in microstrip GaN technology are presented to better understand the key aspects of performance versus robustness trade-off for said components. In particular LNAs with different number of amplification stages, input device gate peripheries and topologies have been evaluated with the objective of achieving in the 8-11 GHz frequency...
Several groups have demonstrated nitride-based High Electron Mobility Transistors with excellent rf output power, with a constant increase in performances. However, despite the large efforts spent in the last few years, and the progress in MTTF (Mean Time To Failure) values, reliability of GaN HEMTs (High Electron Mobility Transistors) and MMICs (Millimeter Microwave Integrated Circuits) still has...
In this paper a first iteration design, fabrication and test of a two-stage X-Band MMIC HPA in micro-strip AlGaN/GaN technology is reported. With 20 V drain voltage operating bias point, at 3 dB compression point, the HPA delivers a pulsed output power ranging from 21 to 28.5 W, an associated gain from 12.9 to 16.5 dB and an associated PAE from circa 30% to 40%, over the 8-10.5 GHz frequency bandwidth...
In this article the design, fabrication and test of X-band and 2-18 GHz wideband high power SPDT MMIC switches in GaN technology are presented. Said switches have demonstrated state-of-the-art performance and RF fabrication yields better than 65%. In particular the X-band switch exhibits an on-state power handling capability of better than 37 dBm at the 1 dB insertion loss compression point and the...
In this paper a first iteration X-band T/R module based on a GaN-HEMT MMIC front-end chip-set, comprising a power amplifier, robust low-noise amplifier and power switch will be presented. Even though ultimate T/R module performance cannot be achieved with current GaN-HEMT technological maturity the impact that this technology can have at systems level in terms of performance/cost trade-off will be...
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