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Strain compensated 1.3μm InAsP/InGaAsP laser structures have been grown by using gas source MBE and the ridge waveguide laser diodes have been fabricated. The temperature characteristics of those laser chips have been investigated in detail. The ridge type laser chips show threshold current about 10mA at room temperature, with slope efficiency greater than 0.35W/A/un-coated facet. The characteristic...
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