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The effects of the insertion of the silicon nanowire (SiNW) array and the incorporation of black phosphorus (BP) powders into poly(3-hexylthiophene) (P3HT) on the behavior of carrier transports and the responsivity to solar irradiation for P3HT/n-type Si (n-Si) devices are studied. It is found that thermionic emission and space charge limited current influence the forward current–voltage characteristics...
The present work reports the fabrication and detailed electrical properties of Al-doped CdO/Si-nanowire (SiNW) arrays/p-type Si Schottky diodes with and without SiNW surface passivation. It is shown that the interfacial trap states influence the electronic conduction through the device. The experimental results demonstrate that the effects of the dangling bonds at the SiNW surface and Si vacancies...
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