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High-energy proton irradiation (380keV and 1MeV) on the electrical properties of CuInSe 2 (CIS) thin films has been investigated. The samples were epitaxially grown on GaAs (001) substrates by Radio Frequency sputtering. As the proton fluence exceeded 1x10 13 cm -2 , the carrier concentration and mobility of the CIS thin films were decreased. The carrier removal rate...
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