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For etchings of LSI and MEMS, a dry etching makes the process simple. In the present study, helium ion etching for polycrystalline copper was conducted, and after that the surface uniformity was examined. The irradiated surface showed unevenness with a roughness of sub-micron size, caused by growth of blisters. When the ion was injected obliquely to the surface, the roughness was reduced owing to...
The surface roughness and etching properties for polycrystalline Cu irradiated by helium and argon ions were examined. In order to obtain a smooth surface and large etching rate, effects of incident angle and fluence of ion were studied. When the incident angle was 0 o , i.e., perpendicular to the surface, the protuberance with a size of crystal grain was observed both for the cases of He...
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