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For ultra-fine pitch and high density Cu pillar low temperature bonding (200°C), the surface contact between substrate and Cu pillar array is the key. Therefore, the fabrication quality of copper bump array affects severely the bonding results. The qualitative factors include (1) Cu pillar array height uniformity, (2) free of copper oxide layer, (3) Cu material property (e.g. elastic modulus, grain...
Low temperature bonding technology is developed using In-alloy on Au at a low temperature below 200??C forming robust intermetallics (IMC) joints with high re-melting temperature (>300??C), so that after bonding the IMC joints can withstand the subsequent processes without any degradation. Using similarly solder system and methodology, chips to wafer (C2W) bonding method has been developed, as...
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