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We grew InAs quantum dots (QDs) embedded in a GaAs0982N0.018 quantum well—a dot-in-a-well (DWELL) structure—that exhibits emission at wavelengths of up to 1.31µm at 19K and the full width at half maximum (FWHM) of 59meV which are lower those of the InAs/GaAs QDs (1.09µm and 82meV, respectively), the reference sample. Our results can be explained as follows: modified strain field at the GaAsN matrix/InAs...
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