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Rubrene single-crystal transistors have achieved one of the highest carrier mobilities in organic semiconductors. However its thin film transistor usually shows inferior performance due to the poor film quality. Therefore how to obtain large-area and high quality rubrene thin film has become a prominent challenge. This work utilized weak epitaxy growth method with new inducing layer 1,3-di(terphenyl)...
A high performance VOPc thin-film transistor based on a fluorobenzene end-capped quaterthiophene as the inducing layer is fabricated by weak epitaxy growth method. The quality of epitaxial VOPc films is significantly improved. A commensurate epitaxial relationship is formed between the inducing layer and the VOPc films, leading to highly ordered VOPc films with large grains, which enhances the in-plane...
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