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The physical properties including the step coverage of the TiN films deposited by atomic layer deposition (ALD) technique, using TiCl 4 and NH 3 as the precursors have been investigated. The deposition rate of the TiN film is constant and moderately high (~0.6Å per cycle) under an optimum deposition condition. The film resistivity is appreciably low (~200μΩcm). The XRD analysis results...
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