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The NdFeB magnets with millimeter sizes, typically between 0.5 and 12 mm, have been widely used in electronics, acoustic products, and micro-motor. Preparing these magnets by the traditional sintering and bonding techniques is associated with complicated process and sacrificed density and machineability of the magnet. Aiming at the huge market requirements and facing those technical problems, the...
We present a fully-integrated SOI CMOS 22nm technology for a diverse array of high-performance applications including server microprocessors, memory controllers and ASICs. A pre-doped substrate enables scaling of this third generation of SOI deep-trench-based embedded DRAM for a dense high-performance memory hierarchy. Dual-Embedded stressor technology including SiGe and Si:C for improved carrier...
We describe interconnect features for Intel's 22nm high-performance logic technology, with metal-insulator-metal capacitors and nine layers of interconnects. Metal-1 through Metal-6 feature a new ultra-low-k carbon doped oxide (CDO) and a low-k etch stop. Metal-7 and Metal-8 use a low-k CDO. New materials and process optimization provide 13–18% capacitance improvement. Single-exposure patterning for...
An AlGaAs/InGaAs pHEMT process employing Deep-UV Phase-Shift lithography to create 0.15uM Y-shape gates has been developed and released to manufacturing. The gate formation process has high throughput and low cost compared to E-beam lithography and excellent process control has been achieved. Typical Fet characteristics are: peak fT=86Ghz, Vp=-1.0V, Gmmax=520mS/mm, Imax=575mA/mm, and BVdg=14 volts...
We demonstrated lasing in a metal-coated GaN nano-stripe under room temperature pulsed operation, and the lasing mode at 370nm were observed. Aluminum and SiO2 layers were coated on the undoped GaN nano-stripe.
A high performance embedded DRAM with deep trench capacitor and high performance SOI logic has been deployed in 45nm and 32nm technology nodes. Following a yield ramp of the sub-2ns latency 45nm technology, we present, for the first time, a 32nm eDRAM technology fully compatible with high performance logic with high-?? metal gate access transistor and high-?? node dielectric for the deep trench storage...
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