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We report in this paper on the improvement of the model presented in [1] for AlGaN/GaN HEMT especially focused on switch applications. We developed a new method to measure accurately the ON resistance Ron versus the junction temperature, and will compare here our thermal model to the measurements realized in pulsed I(V) and in [S]-parameters. We also focused on the influence of drain and gate impedances...
This paper deals with non-linear modeling of power GaN HEMT and design of power balanced cascode cell for wideband distributed power amplifiers. The active device is a 8times50 mum AlGaN/GaN HEMT grown on SiC substrate. The cascode die is flip-chipped onto an AlN substrate via electrical and mechanical bumps. This GaN-based cascode cell is dedicated to act as the unit power device within a broad-band...
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