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In this paper, a novel low leakage saddle junctionless field effect transistor with assistant gate is proposed. Its electrical properties have been extensively investigated by studying the influence resulting from variation of design parameters, such as the thickness of assistant gate, oxide layer thickness between the main and assistant gate, extension height of S/D contact, and the voltage of assistant...
We have proposed a subthreshold current model for fully depleted short channel double‐gate (DG) MOSFETs by considering the structure asymmetry. Potential distribution is derived by solving 2‐D Poisson's equation using variable separation technique. The degraded subthreshold characteristics variations due to structure asymmetry such as the difference of oxide thicknesses or biases between front‐gate...
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