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Wide-stripe MOVPE selective area growth and InAsP mass transport on V-grooves can be used to fabricate distributed Bragg reflector type laser in a single growth step. This method can be applied for monolithic integration of single mode laser diodes with passive/active components
By the flow modulation growth, we suggest the existence of an intermediate layer at the surface of InP and InGaP during the growth. Its transient behavior was analyzed in connection to the surface segregation phenomena
A kinetic study was done on the decomposition of source materials used in metalorganic vapor phase epitaxy (MOVPE) such as trimethylgallium, trimethylindium, tertiarybutylarsine, tertiarybutylphosphine and dimethylzinc. The purpose of this study was to construct reaction models with accurate rate constants, which are required for the numerical analysis of MOVPE process and computer assisted process...
A kinetic study was done on the decomposition of source materials used in metalorganic vapor phase epitaxy (MOVPE) such as trimethylgallium, trimethylindium, tertiarybutylarsine, tertiarybutylphosphine and dimethylzinc. The purpose of this study was to construct reaction models with accurate rate constants, which are required for the numerical analysis of MOVPE process and computer assisted process...
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