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A 60-GHz receiver front-end with an integrated 180° out-of-phase Wilkinson power divider using standard 0.13 μm CMOS technology is reported. The receiver front-end comprises a wideband low-noise amplifier (LNA) with 12.4-dB gain, a current-reused bleeding mixer, a baseband amplifier, and a 180° out-of-phase Wilkinson power divider. The receiver front-end consumed 50.2 mW and achieved input return...
A 53.5-62-GHz wideband CMOS low-noise amplifier (LNA) with excellent phase linearity property is reported. Current-sharing technique is adopted to reduce power dissipation. The LNA (STD LNA) consumed 29.1 mW and achieved input return loss (S11) of -10.3~ -19.5 dB, output return loss (S22) of -13.8~ -27.8 dB, forward gain (S21) of 8.1~ 11.1 dB, and reverse isolation (S12) of -49.9~ -60.2 dB over the...
A low-power low-phase-noise 48-GHz CMOS LC voltage-control oscillator (VCO) and a low-power 60-GHz CMOS low-noise amplifier (LNA) for 60-GHz dual-conversion receiver are reported. The VCO dissipated 5.556 mW power, and achieved state-of-the-art phase noise of -105 dBc/Hz at 1-MHz offset from 47.84 GHz. The corresponding figure-of-merit (FOM) was -191.1 dBc/Hz, which is better than those of the reported...
A 21-27-GHz wideband low-noise amplifier (LNA) with state-of-the-art phase linearity property (group-delay-variation is only plusmn8.1 ps across the whole band) using standard 0.18 mum CMOS technology is reported for the first time. To achieve high and flat gain and small group-delay-variation at the same time, the inductive series-peaking technique was adopted in the output of each stage for bandwidth...
A 3.1-10.6-GHz ultra-wideband low-noise amplifier (UWB LNA) with excellent phase linearity property (group-delay-variation is only plusmn16.7 ps across the whole band) using standard 0.13 mum CMOS technology is reported. To achieve high and flat gain and small group-delay-variation at the same time, the inductive peaking technique is adopted in the output stage for bandwidth enhancement. The UWB LNA...
A low-power-consumption 53-GHz (V-band) low-noise amplifier (LNA) using standard 0.13 mum CMOS technology is reported. To achieve sufficient gain, this LNA is composed of four cascaded common-source stages. Current-sharing technique is adopted in the third and the four stage to reduce the power dissipation. The output of each stage is loaded with an LC parallel resonance circuit to maximize the gain...
A 3.1-10.6 GHz ultra-wideband low-noise amplifier (UWB LNA) with excellent phase linearity property (group-delay-variation is only plusmn17.4 ps across the whole band) using standard 0.18 mum CMOS technology is reported. To achieve high and flat gain and small group-delay-variation at the same time, the inductive peaking technique is adopted in the output stage for bandwidth enhancement. The UWB LNA...
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