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Epitaxially laterally overgrown (ELO)-GaN substrates with dislocation-free regions can be prepared with a relatively small thickness using atmospheric pressure metal-organic chemical vapor deposition (MOCVD). In order to determine the effect of ELO-GaN layer on the reliability of blue-violet laser diodes (BV-LDs), we fabricated BV-LDs on the lateral-growth region of the ELO-GaN layer. The thickness...
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