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We demonstrate evanescently-coupled waveguide modified uni-traveling-carrier (MUTC) photodiodes with more than 105 GHz bandwidth. The photodiodes have dark currents as low as nA and deliver RF output powers of 5.1 dBm, 4.4 dBm and 3.5 dBm at 75 GHz, 80 GHz and 90GHz, respectively.
We demonstrated a GaN-based p-i-n photodiode by inserting a thin low-temperature-grown-GaN layer between p-type Al0.2Ga0.8N window and intrinsic GaN layer. As compared with control device, our demonstrated one can achieve 3 fold bandwidth-efficiency-products improvement.
We demonstrate a novel photonic transmitter, which is composed of a low-temperature-grown GaAs (LTG-GaAs)-based separated-transport-recombination photodiode and a micromachined slot antenna. Under femtosecond optical pulse illumination, this device radiates strong electrical pulses (4.5-mW peak power) without the use of a Si-lens. It can be observed in the Fourier transform infrared spectrometer spectrum...
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