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TlInGaAs/TllnP/InP separate confinement heterostructures (SCHs) were grown by gas-source molecular-beam epitaxy and metal stripe laser diodes (LDs) were fabricated. Temperature variation of electroluminescence peak wavelength was as small as 0.06 nm/K due to the reduced temperature variation of band gap energy of TlInGaAs. Pulsed laser operation was achieved at 77 K - 297 K. Threshold current density...
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