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Electrical switching of resistive memory is highly interface-dependent. We studied such a switching of Cu-doped amorphous SiOx thin-films in a sandwich stack Cu/Si(Cu)Ox/Pt. The stacks were prepared using radio frequency sputtering except Cu co-doping which utilized direct current (DC) power from 2W to 15W. We characterized electrical switching behavior by a Keithley 4200 semiconductor analyzer. Cu/Si(Cu)O...
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