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GaN planar Schottky barrier diode (SBD) with an n−/n+ structure was grown and fabricated on sapphire substrate. An n+ GaN epitaxial layer with doping concentration of 8 × 1018 cm−3 was employed to reduce the parasitic resistance. An air-bridge structure and 50 μm substrate thinning-down technique were adopted in order to reduce the parasitic capacitance. A record cut-off frequency (fc) of 902 GHz...
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