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Direct deposition of Si by a 200 eV Si 2+ focused ion beam (FIB) on an Au-evaporated substrate was performed in oxygen atmosphere under a pressure of 10 −5 Torr. From Auger electron spectroscopy (AES) measurement, it was found that a large amount of oxygen was incorporated in the deposited material, but clear chemical shift in Si AES signal was not observed. From Raman scattering measurement,...
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