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We investigated the growth mode and the crystal properties of lateral epitaxial overgrowth (LEO) semipolar (11−22) GaN by using the various SiO 2 pattern sizes of 6, 8, 10 and 12μm with the window width of 4.0μm. By using three-step growth technique, we successfully obtained the fully-coalescenced semipolar (11−22) LEO-GaN films regardless of the SiO 2 pattern sizes. However, the coalescence...
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