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For scaled MOSFET devices, normal operation of devices is seriously affected due to static gate tunneling leakage currents with ultra-thin gate oxide of MOSFET, and the novel MOSFET devices based on strained Si are similar to bulk Si devices in the effects. To illustrate the impacts of gate leakage current on performances of novel strained Si devices, a theoretical gate tunneling currents predicting...
Low-temperature polycrystalline-silicon thin-film transistor (LTPS TFT) has emerged as one of the promising candidates for low-power low-cost applications on flexible substrates. In this paper, we propose a statistical simulation methodology to estimate parametric variations in scaled LTPS TFT due to the inherent properties [such as the number, location, and orientation of grain boundaries (GBs)]...
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