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Carbon films were grown on single crystal silicon substrate by XeCl excimer pulsed laser deposition (PLD) and fullerene (C60) is used as a target. A detailed Raman analysis is presented here to investigate the structural change of the film and hence the result is compared with those of the films produced from graphite and camphor (C10H16O) targets deposited in the similar conditions. Raman analysis...
This paper reports on the successful deposition of phosphorous (P)-doped n-type (n-C:P) carbon (C) films, and fabrication of n-C:P/p-Si cells by using pulsed laser deposition (PLD) technique at room temperature, using graphite target. The P atoms incorporated in the films were determined by X-ray photoelectron spectroscopy (XPS) to be in the range of 0.22 - 1.77 atomic percentages. The cells performances...
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