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Si/SiC composite films, namely, Si nano-particles in SiC matrix material, were prepared by using RF alternate sputtering technique and then annealed at high temperature from 1100 to 1400 °C. The photoluminescence (PL) phenomenon was observed in samples annealed over 1200 °C. The PL spectra show two emission bands at about 352 nm and 468 nm and the PL intensity increasing with temperature rising. The...
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