The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The direct gate leakage current in double-gate n-type MOSFETs with physical gate lengths of 10 nm is investigated. This work uses a combination of a two-dimensional non-equilibrium Green's function (NEGF) based upon a real-space expansion method and Poisson's equation, which are solved self-consistently. In the conventional ID analysis of the gate leakage current, an optical potential or an imaginary...
Gate-leakage current from quasi-bound states in highly scaled metal-oxide-semiconductor devices has been investigated by using a non-equilibrium Greenpsilas function method. We have taken account of the realistic band structure of Si with anisotropic effective masses. This study also presents a model for the efficient simulation of gate-leakage current with open boundaries where no escape time or...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.