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Single crystal silicon wafers (Si (100) ) were implanted with 110 keV Ar + ions at a fluence of 1×10 16 ions/cm 2 . Then the unimplanted and ion-implanted Si surfaces were coated with an amorphous carbon coating of 50±5 nm thick making use of vacuum vapor deposition. The microstructures of the unimplanted and Ar + ion implanted Si wafers were analysed by means of transmission...
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