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A 1.75GHz CMOS Doherty power amplifier (PA) is presented. This Doherty PA uses voltage combining method that is different from the conventional current combining Doherty amplifier based on HBT. The output transformer is employed to combine the output power and realize the load modulation. The proposed CMOS Doherty PA is fabricated in 180nm CMOS process. Simulation results show that the output transformer...
A Doherty power amplifier (PA) for long term evolution (LTE) applications is fully integrated on a 1.4×1.4 mm2 die using a 2-µm InGaP/GaAs hetero-junction bipolar transistor (HBT) process. The quarter-wavelength transformer is the bandwidth (BW) limit of the Doherty PA. Other bandwidth limiting factors are analyzed and eliminated. A conventional phase compensation circuit and an additional offset...
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