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We investigated the orientation of domains in LiNbO 3 (LN) thin films grown by electron–cyclotron resonance plasma sputtering on TiN films with various crystalline states. Deposition at 400°C on an amorphous TiN produced partially crystallized and apparently c-axis-oriented LN. When TiN crystallized at 460°C to become polycrystalline grains, the roughened surface randomized the orientation...
Al 2 O 3 and AlN films, with a minimum thickness of 2nm, were deposited without substrate heating using an advanced electron cyclotron resonance (ECR) plasma source coupled with divided microwaves, and the electrical characteristics of the films were investigated. The uniformity of the film thickness is within +/-2% on a 6-in wafer. High resistivity of the order of 10 15 ...
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